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[1] 2020.01-2025£¬SLM³ÉÐÎÎÞÄý¹ÌÊÕËõÖÐ/¸ßÌå»ý·ÖÊýSiCpÔöÇ¿Al»ù¸´ºÏ²ÄÁϵļ¼Êõ»ù´¡£¬¹ú¼ÒÖصã»ù´¡Ñо¿£¬ÏîÄ¿À´Ô´µ¥Î»Îª¹ú¼Ò×ÔÈ»»ù½ðί£¬µÚ¶þÍê³ÉÈË

[2] 2011.5-2016.5£¬¶à×éÔªºÏ½ð¼°Æä½á¹¹¼þÖýÔì¹ý³ÌµÄÄý¹Ì»ù´¡Ñо¿£¬¹ú¼ÒÖصã»ù´¡Ñо¿£¬ÏîÄ¿À´Ô´µ¥Î»Îª¹ú¼Ò¿Æ¼¼²¿£¬94Íò

[3] 2011.1-2013.12£¬¶àÔªºÏ½ð¹Ì-Òº½çÃæÄÜËæºÏ½ð³É·ÖºÍζȵı仯¹æÂÉÑо¿£¬¹ú¼ÒÖصã»ù´¡Ñо¿£¬ÏîÄ¿À´Ô´µ¥Î»Îª¹ú¼Ò×ÔÈ»»ù½ðί£¬38Íò

[4]  2021.01-2022.12,¾§½ç¶ÔFCC¸ßìغϽðÁ¦Ñ§ÐÔÄܼ°Î¢¹Û½á¹¹µÄÓ°Ïì, ÉÂÎ÷Ê¡¿Æ¼¼Ìü×ÔÈ»¿ÆѧÑо¿¼Æ»®ÏîÄ¿, ÏîÄ¿À´Ô´µ¥Î»ÎªÉÂÎ÷Ê¡¿Æ¼¼Ìü, 5Íò

[5] 2020.01-2021.12, AlxCoCrFeNi¸ßìغϽð΢¹Û×éÖ¯ÓëÁ¦Ñ§ÐÔÄÜ΢¹Û»úÀíÑо¿, ÉÂÎ÷Ê¡½ÌÓýÌüÖصã¿ÆѧÑо¿¼Æ»®ÏîÄ¿, ÏîÄ¿À´Ô´µ¥Î»ÎªÉÂÎ÷Ê¡¿Æ¼¼Ìü£¬5Íò

[6] 2016.06-2017.12, Zn(NH4)3Cl5ÊäÔË·¨ZnSe¾§ÌåµÄÖƱ¸¹¤ÒÕÑо¿, ÉÂÎ÷Ê¡½ÌÓýÌü, ÏîÄ¿À´Ô´µ¥Î»ÎªÉÂÎ÷Ê¡½ÌÓýÌü£¬2Íò

[7] 2013.7-2015.7£¬¸ßÖÊÁ¿ZnSeµ¥¾§µÄÖƱ¸¹¤ÒÕÑо¿£¬Ê¡ÊÐÖصãÓ¦ÓÃÑо¿£¬ÏîÄ¿À´Ô´µ¥Î»ÎªÉÂÎ÷Ê¡½ÌÓýÌü£¬2ÍòÔª

[8] 2014.5-2016.4£¬ZnSeµ¥¾§µÄÖƱ¸ÓëÐÔÄÜÑо¿£¬Ê¡ÊÐÖصãÓ¦ÓÃÑо¿£¬ÏîÄ¿À´Ô´µ¥Î»ÉÂÎ÷Ê¡¿Æ¼¼Ìü£¬6ÍòÔª

[9] 2012.6-2014.12£¬¼¤¹â·ÃæÍä³Á²â¶¨ÒÇÖÐÊÔÑо¿£¬Ê¡ÊÐÖصãÓ¦ÓÃÑо¿£¬ÏîÄ¿À´Ô´µ¥Î»ÉÂÎ÷Ê¡½»Í¨ÔËÊäÌü£¬10ÍòÔª

[10] 2013.12-2015.11£¬¹âµç¹¦ÄܲÄÁϵÄÖƱ¸ÓëÐÔÄÜÑо¿£¬Ð£ÄÚÖصãÓ¦ÓÃÑо¿£¬ÏîÄ¿À´Ô´µ¥Î»²»ÏÞip×¢²áËÍ37Ôª½ð±Ò£¬2ÍòÔª

[11] 2012.4-2012.7£¬¼¤¹â´«Êä¿ØÖÆϵͳÐÔÄÜ·ÖÎö¼°¿ØÖÆÈí¼þ¿ª·¢£¬ºÏ×÷ÏîÄ¿Ó¦ÓÃÑо¿£¬ÏîÄ¿À´Ô´µ¥Î»ÎªÖйú±øÆ÷¹¤ÒµµÚ¶þ0¶þÑо¿Ëù£¬17Íò

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[1] Cuixia Liu, Rui Wang, Zengyun Jian. The Influence of Grain Boundaries on Crystal Structure and Tensile Mechanical Properties of Al0.1CoCrFeNi High-Entropy Alloys Studied by Molecular Dynamics Method. Crystals 2022, 12(1), 48.

[2] Ò¦è¤, Áõ´äϼ, ÏÄÕñº£. µ¥¾§Al_(0.1)CoCrFe...¸ßìغϽðÁÑÎÆÀ©Õ¹µÄ·Ö×Ó¶¯Á¦Ñ§Ä£Äâ.²»ÏÞip×¢²áËÍ37Ôª½ð±Òѧ±¨,2021,41(5):559-565

[3] Cuixia Liu, Yuchia Yangb and Zhenhai Xia. Deformation Mechanism in Al0.1CoCrFeNi¦²3(111)[11 ?0]High Entropy Alloys - Molecular Dynamics Simulation.RSC Advances, 2020, 10: 27688 - 27696

[4] Yu-Chia Yang, Cuixia Liu Chun-Yu Lin Zhenhai Xia.Core Effect of Local Atomic Configuration and Design principles in AlxCoCrFeNi High-Entropy Alloys. Scripta materialia. 2020,17:181-186

[5] ÕÅÀÖ³¿,Áõ´äϼ,¼áÔöÔË.Al-0.35NiºÏ½ðÄý¹Ì¹ý³Ì΢¹Û×éÖ¯µÄÏೡ·¨ÊýֵģÄ⣬Èȼӹ¤¹¤ÒÕ2020,49(10):52-56.

[6] Áõ´äϼ,ÍõÉÙ¸Õ,¼áÔöÔË.Al0.25Ni0.75ºÏ½ðÄý¹Ì¹ý³ÌµÄ·Ö×Ó¶¯Á¦Ñ§Ä£Äâ,²»ÏÞip×¢²áËÍ37Ôª½ð±Òѧ±¨, 2019.39(3):318-323

[7] Áõ´äϼ,ÕÅÀÖ³¿,¼áÔöÔË. FeNiCrCo-X ϵ¸ßìغϽðµÄÑо¿½ø,Ó¦Óû¯¹¤£¬2019,48(6):1483-1490

[8] Áõ´äϼ,ÍõÉÙ¸Õ,¼áÔöÔË. ÉÁп¿ó½á¹¹ZnSeµÄ¹âµçÐÔÖʺÍÓÐЧÖÊÁ¿Ñо¿.²»ÏÞip×¢²áËÍ37Ôª½ð±Òѧ±¨,2019,39(2):191-196

[9] ÍõÉÙ¸Õ,Áõ´äϼ,¼áÔöÔË. Al-CuºÏ½ðÀ©É¢ÏµÊýµÄ·Ö×Ó¶¯Á¦Ñ§Ä£ÄâÑо¿.²»ÏÞip×¢²áËÍ37Ôª½ð±Òѧ±¨,2018,38(6):559-564

[10] Cuixia Liu, Zengyun Jian, Man Zhu, Lianyang Chen. First-principle study of stacking fault energy for ZnSe single crystal. Computational Materials Science, 2015 96: 81-84. (SCI AT4XU )

[11] Áõ´äϼ,¼áÔöÔË,ÂÞÏÍ,ÍõÓîÅô.µâÊäÔË·¨¶ÔCVT·¨ÖƱ¸ZnSeµ¥¾§µÄÐÔÄÜÓ°ÏìÑо¿.Ï¡ÓнðÊô²ÄÁÏÓ빤³Ì£¬2014 43(4):866-869 (SCI AG5VW)

[12] Cuixia Liu, YanQing Yang, Man Zhu, Chen Yang. Influence of CH3SiCl3 Consistency on Growth Process of SiC Film by Kinetic Monte Carlo Method. Journal of WuHan University of Technology Material Science. 2012 27(5):1008-1012 (SCI£º029CW)

[13] CuixiaLiu,YanqingYangXianLuo. Grain-scale Growth Simulation of SiC Film with the Chemical Vapor Deposition. Method. Computational Materials Science.2012,59:128-132(SCI927UC)

[14] CuixiaLiu,YanqingYangXianLuo.A three-dimensional atomic-scale simulations of CVD-SiC film growth in {111}, {110} and {100} family of planes. Computational Materials Science.2011,50(8):2338-2346 (SCI773CD)

[15] Cui-xia Liu, Yan-Qing Yang, Rong-Jun Zhang, Xian Luo. Grain Growth Simulation of {111} and {110} Oriented CVD-SiC Film by Potts Monte Carlo. Computational Materials Science. 2009, 44: 1281-1285 (SCI: 412CA , EI: 090511884394)

[16] C.X.Liu, Y.Q.Yang, X.Luo, R.J.Zhong, B.Huang. Multi-length Scale Monte Carlo Simulation of the Growth Process of SiC Film by Chemical Vapor Deposition. Applied Surface Science. 2008, 255(5): 3342-3349 (SCI:378CR, EI: 084911767777)

[17] Cui Xia Liu, Y.Q.Yang, R.J.Zhang, X.X.Ren. Kinetic Monte Carlo Simulation of {111}-Oriented SiC Film with Chemical Vapor Deposition. Computational Materials Science. 2008, 43(4): 1036-1041 (SCI: 372QR, EI: 084111629193)

[18] Áõ´äϼ, ÑîÑÓÇå, »Æ±ó, ÕÅÈÙ¾ü, ÂÞÏÍ, ÈÎÏþϼ. »¯Ñ§ÆøÏà³Á»ýSiCĤ{111}È¡ÏòÉú³¤µÄÔ­×ӳ߶ÈÄ£Äâ. ÎÞ»ú²ÄÁÏѧ±¨. 2008, 23(5): 933-937 (SCI:355DY , EI: 084111636647)

[19] Cuixia Liu Yanqing Yang, Luo Xian.Influence of deposition temperature on tensile behavior and fracture characteristics of SiC Filament by Chemical Vapor Deposition. Advanced Materials Research. 2011,146-147: 1159-1162 (Ei20110113539107)

[20] Cuixia Liu, Zengyun Jian, Man Zhu. Study for Preparation and Photoelectric Property of ZnSe Crystal. Advanced Materials Research. 2011,156-157: 1101-1104 (Ei20110113554255)

[21] Cuixia Liu Yanqing Yang, Luo Xian.Influence of substrate material on tensile behavior and fracture characteristics of SiC by chemical vapour deposition. Advanced Materials Research. 2011, 213:272~275(Ei 20111113742676)

[22] Áõ´äϼ£¬¼áÔöÔË£¬Áõ½¨¿µ£¬³ÂÁ¬Ñô.ZnSeµ¥¾§ÆøÏàÉú³¤ÊäÔ˼ÁZn(NH4)2Cl4µÄÖƱ¸¹¤ÒÕÑо¿, ²»ÏÞip×¢²áËÍ37Ôª½ð±Òѧ±¨£¬2015v 35(2) 158-161

[23] Áõ´äϼ, ÂÀÖ¾¸Õ, ¹ùÑÞÄÝ, ÖìÂú.»ùÓÚCDIOµÄ¡¶²ÄÁÏ¿Æѧ»ù´¡¡·½Ìѧ·½·¨¸Ä¸ïÑо¿,¹ãÖÝ»¯¹¤ 2014,42(5):133-135

[24] Áõ´äϼ, ÍõÕýÆ·, ÖìÂú.¡¶²ÄÁÏ¿Æѧ»ù´¡(Ë«Óï)¡·¿Î³ÌCDIO½ÌѧģʽµÄÑо¿, ¹ãÖÝ»¯¹¤2015,43(15):226-229

[25] Áõ´äϼ£¬¼áÔöÔË£¬Öì¡¡Âú£¬³ÂÁ¬Ñô.Cu²ôÔÓZnSe¹âµçÐÔÖʵĵÚÒ»ÐÔÔ­Àí¼ÆËã. ²»ÏÞip×¢²áËÍ37Ôª½ð±Òѧ±¨, 2014v 34 819-823

[26] Áõ´äϼ, ÑîÑÓÇå, ÂÞÏÍ.Í¿²ã¶ÔCVD·¨SiCÏËάÀ­Éì¶ÏÁÑÐÐΪµÄÓ°Ïì. ²»ÏÞip×¢²áËÍ37Ôª½ð±Òѧ±¨,2012 V32£¬p1004-1007

[27] Áõ´äϼ, ÑîÑÓÇå, ÐìæÃ. CVD·¨SiCÏËά³Á»ý¹ý³ÌµÄÕý½»ÊÔÑéÑо¿. ¹¦ÄܲÄÁÏ, 2011,42: 89-91(Ei20111513905372)

[28] Áõ´äϼ£¬¼áÔöÔË£¬ÖìÂú. ZnSe¾§ÌåµÄÆøÏà·¨ÖƱ¸ºÍÐÔÄÜÑо¿,²ÄÁϵ¼±¨,2011, 25(6):20-22

[29] Áõ´äϼ, ÑîÑÓÇå, ÐìæÃ, ÂíÖ¾¾ü, ³ÂÑå. »¯Ñ§ÆøÏà³Á»ý·¨Á¬ÐøSiCÏËάµÄÑо¿ÏÖ×´ºÍ·¢Õ¹Ç÷ÊÆ. ²ÄÁϵ¼±¨. 2006, 20(8): 35-40

[30] Áõ´äϼ, ÑîÑÓÇå, ÕÅÈÙ¾ü, ÈÎÏþϼ. Ϳ̼ǰºóSiCÏËάµÄÇ¿¶È²âÊÔºÍÆÀ¼Û. ²ÄÁϹ¤³Ì. 2009, (2): 63~66 (EI: 091111955359)